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features features collector - emitter voltage v ceo 50 vdc collector - base voltage v cbo 75 vdc emitter - base voltage v ebo 6 vdc collector current - continuous i c 800 madc total device dissipation @ t a = 25 c p d 0.8 watts derate above 25 c 4.6 mw/ c total device dissipation @ t c = 25 c p d 1.0 watts derate above 25 c 17.0 mw/ c operating junction&storage temperature range t j , t stg - 55 to +200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 217 c/w thermal resistance, junction to case r jc 59 c/w small signal bipolar npn silicon switching transistor to-39 revision: 6 2008/04/16
omp onents 20736 marilla street chatsworth
mcc ? collector - base voltage 75 v ? collector - current 800 ma ? medium current, bipolar transistor ? marking: type number 2n2219a tm micro commercial components www. mccsemi .com 1 of 10 notes:1.high temperature solder exemption applied, see eu directive annex 7. ? lead free finish/rohs compliant(note 1) ("p" suffix designates rohs compliant. see ordering information) absolute maximum ratings
2n2219a electrical characteristics (t a = 25 c unless otherwise noted) off characteristic symbol min max unit collector - emitter breakdown voltage (1) v(br) ceo ( i c = 10 ma dc, i b = 0 ) 50 vdc collector - base breakdown voltage v(br) cbo ( i c = 10 adc, i e = 0 ) 75 vdc emitter - base breakdown voltage v(br) ebo ( i e = 10 adc, i c = 0 ) 6 vdc collector - emitter cutoff current i ces ( v ce = 50 vdc ) 10 nadc collector - base cutoff current i cbo ( v cb = 60 vdc, i e = 0 ) 10 nadc ( v cb = 60 vdc, i e = 0, t a = 150 c ) 10 adc emitter - base cutoff current i ebo ( v eb = 4 vdc ) 10 nadc ( v eb = 6 vdc ) 10 adc on characteristic symbol min max unit dc current gain h fe ( i c = 0.1 ma dc, v ce = 10 vdc ) (1) 50 ( i c = 1 ma dc, v ce = 10 vdc ) (1) 75 325 ( i c = 10 ma dc, v ce = 10 vdc ) (1) 100 ( i c = 150 ma dc, v ce = 10 vdc ) (1) 100 300 ( i c = 500 ma dc, v ce = 10 vdc ) (1) 30 ( i c = 10 ma dc, v ce = 10 vdc, t j = -55 c ) (1) 35 collector - emitter saturation voltage v ce(sat) ( i c = 150 madc, i b = 15 madc ) (1) 0.3 vdc ( i c = 500 madc, i b = 50 madc ) (1) 1.0 vdc base - emitter saturation voltage v be(sat) ( i c = 150 madc, i b = 15 madc ) (1) 0.6 1.2 vdc ( i c = 500 madc, i b = 50 madc ) (1) 2.0 vdc 1. pulse test: pulse width 300 s, duty cycle .2 % mcc revision: 6 2008/04/16 tm micro commercial components www. mccsemi .com 2 of 10
electrical characteristics (t a = 25 c unless otherwise noted) small - signal characteristics symbol min max unit output capacitance c obo ( v cb = 10 vdc, i e = 0, 100khz f 1 mhz ) 8.0 pf input capacitance c ibo ( v eb = 0.5 vdc, i c = 0, 100khz f 1 mhz ) 25 pf switching characteristics symbol min max unit turn - on time t on ( v cc = 30 vdc, i c = 150 madc, i b1 =15 madc) ( see figure 1 ) 35 ns turn - off time t off ( v cc = 30 vdc, i c = 150 madc, i b1 = - i b2 = 15 madc) ( see figure 2 ) 300 ns small - signal ac characteristics (t a = 25 c) low frequency symbol min max unit common - emitter forward current transfer ratio h fe ( i c = 1 ma, v ce = 10 v, f = 1khz ) 75 high frequency common - emitter forward current transfer ratio |h fe | ( i c = 20 ma, v ce = 20 v, f = 100 mhz ) 2.5 12 mcc 2n2219a revision: 6 2008/04/16 tm micro commercial components www. mccsemi .com 3 of 10
to-39 case outline mcc 2n2219a revision: 6 2008/04/16 tm micro commercial components www. mccsemi .com 4 of 10
figure 1 saturated turn-on time test circuit figure 2 saturated turn-off time test circuit t mcc 2n2219a revision: 6 2008/04/16 tm micro commercial components www. mccsemi .com 5 of 10
figure 3 figure 4 .0001 .001 .01 .1 1 ic collector current (a) 0 50 100 150 200 250 hfe current gain 0 50 100 150 200 250 dc current gain vce = 10 v typ @ 25c typ @ -55c .0001 .001 .01 .1 1 ib, base current (a) 0.0 0.2 0.4 0.6 0.8 1.0 vce, collector-emitter (v) 0.0 0.2 0.4 0.6 0.8 1.0 collector saturation vs base current tj = 25 c ic = 500 ma ic = 150 ma mcc 2n2219a revision: 6 2008/04/16 tm micro commercial components www. mccsemi .com 6 of 10
figure 5 figure 6 .001 .01 .1 1 ib, base current (a) 0.50 0.75 1.00 1.25 vbe, base-emitter voltage (v) 0.50 0.75 1.00 1.25 base saturation vs base current tj = 25 c ic = 150 ma ic = 500 ma .01 .1 1 10 100 reverse junction voltage (v) 0 5 10 15 20 25 30 junction capacitance (pf) 0 5 10 15 20 25 30 junction capacitance tj = 25 c 100 khz < f < 1 mhz cobo cibo mcc 2n2219a revision: 6 2008/04/16 tm micro commercial components www. mccsemi .com 7 of 10
figure 7 figure 8 10 100 1000 collector current (ma) 100 10 100 ton time (ns) 100 10 100 switching turn - 0n time tj = 25 c ic/ib = 10 min. max. 500 10 100 collector current (ma) 1000 100 1000 toff time (ns) 1000 100 1000 switching turn - off time tj = 25 c ic/ib = 10 min. max. mcc 2n2219a revision: 6 2008/04/16 tm micro commercial components www. mccsemi .com 8 of 10
figure 9 1 10 100 1000 frequency mhz .01 .1 1 normalized gain .01 .1 1 normalized gain vs frequency tj = 25c ic = 20 ma vce = 20 v mcc 2n2219a revision: 6 2008/04/16 tm micro commercial components www. mccsemi .com 9 of 10
mcc revision: 6 2008/04/16 tm micro commercial components www. mccsemi .com 10 of 10 products are represented on our website, harmless against all damages. ***applications disclaimer*** ***important notice*** aerospace or military applications. products offer by micro commercial components corp . are not intended for use in medical, micro commercial components corp . reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . micro commercial components corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . the user of products in such applications shall assume all risks of such use and will agree to hold micro commercial components corp . and all the companies whose ordering information device packing (part number)-bp bulk;50pcs/box

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